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| STM8300 S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) VDSS 30V PRODUCT SUMMARY (P-Channel) VDSS -30V ID 5.3A RDS(ON) (m) Max 46 @ VGS=10V ID -4.7A RDS(ON) (m) Max 56 @ VGS=-10V 90 @ VGS=-4.5V 65 @ VGS=4.5V D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a N-Channel 30 20 TA=25C TA=70C TA=25C TA=70C 5.3 4.2 19 a P-Channel -30 20 -4.7 -3.8 -17 2.0 1.28 Units V V A A A W W C Maximum Power Dissipation Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 C/W Details are subject to change without notice. Jul,31,2008 1 www.samhop.com.tw STM8300 Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=24V , VGS=0V 30 1 100 V uA nA VGS= 20V , VDS=0V ON CHARACTERISTICS VGS(th) RDS(ON) gFS Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=5.3A VGS=4.5V , ID=4.5A VDS=5V , ID=5.3A 1 1.6 38 48 10 3 46 65 V m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS COSS CRSS Output Capacitance 310 VDS=15V,VGS=0V f=1.0MHz 73 44 pF pF pF Reverse Transfer Capacitance c SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=15V ID=1A VGS=10V RGEN=6 ohm VDS=15V,ID=5.3A,VGS=10V VDS=15V,ID=5.3A,VGS=4.5V VDS=15V,ID=5.3A, VGS=10V 7.5 9.5 16 13 5.3 2.8 0.9 1.2 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS IS VSD Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage b 1 0.79 1.2 A V VGS=0V,IS=1A Jul,31,2008 2 www.samhop.com.tw STM8300 Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-24V , VGS=0V Min Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current -30 -1 100 uA nA VGS= 20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=-250uA VGS=-10V , ID=-4.7A VGS=-4.5V , ID=-3.7A VDS=-5V , ID=-4.7A -1.0 -1.8 46 68 7.5 -3.0 56 90 V m ohm m ohm S DYNAMIC CHARACTERISTICS CISS COSS CRSS Input Capacitance Output Capacitance Reverse Transfer Capacitance c VDS=-15V,VGS=0V f=1.0MHz 520 125 78 7.5 12.4 62 37 10.3 5.2 1.1 2.8 pF pF pF ns ns ns ns nC nC nC nC SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=-15V ID=-1A VGS=-10V RGEN=6 ohm VDS=-15V,ID=-4.7A,VGS=-10V VDS=-15V,ID=-4.7A,VGS=-4.5V VDS=-15V,ID=-4.7A, VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b VGS=0V,IS=-1A -0.77 -1 -1.2 A V Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. Jul,31,2008 3 www.samhop.com.tw STM8300 Ver 1.0 N-Channel 25 VG S =10V VG S =4.5V VG S =4V 15 ID, Drain Current(A) 15 VG S =3.5V ID, Drain Current(A) 20 12 9 25 C 6 T j=125 C 3 -55 C 0 0.0 10 VG S =3V VG S =2.5V 5 0 0 0.5 1 1.5 2 2.5 3 0.7 1.4 2.1 2.8 3.5 4.2 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 78 65 V G S =4.5V Figure 2. Transfer Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0.8 VGS=10V ID=5.3A VGS=4.5V ID=4.5A RDS(on)(m ) 52 39 V G S =10V 26 13 0 1 5 10 15 20 25 RDS(on), On-Resistance Normalized 0 25 50 75 100 125 150 T j ( C ) ID, Drain Current(A) Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA Vth, Normalized Gate-Source Threshold Voltage 1.4 1.2 1.0 0.8 0.6 V DS =V G S ID=250uA 0.4 -55 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature 4 Figure 6. Breakdown Voltage Variation with Temperature Jul,31,2008 www.samhop.com.tw STM8300 Ver 1.0 90 75 20 Is, Source-drain current(A) ID=5.3A 10 RDS(on)(m ) 60 45 30 15 0 75 C T J = 125 C 25 C 25 C T J = 125 C 75 C 0 2 4 6 8 10 1.0 0 0.3 0.6 0.9 1.2 1.5 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 600 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VGS, Gate to Source Voltage(V) 500 C, Capacitance(pF) 8 6 4 2 0 0 VDS=15V ID=5.3A 400 Ciss 300 200 Coss 100 Crss 0 0 5 10 15 20 25 30 1 2 3 4 5 6 7 8 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 250 70 im it 10 0u Switching Time(ns) 100 60 10 T D(on) ID, Drain Current(A) 10 RD T D(off) Tr Tf ON S( )L 1m 10 s s 1 VGS =10V S ingle P ulse T A=25 C 1 DC 10 ms 0m s 1 1 V DS =15V ,ID=1A V G S =10V 0.1 6 10 60 100 300 600 0.1 10 30 50 Rg, Gate Resistance() VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jul,31,2008 5 www.samhop.com.tw STM8300 Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 t2 1. 2. 3. 4. R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 100 1000 Jul,31,2008 6 www.samhop.com.tw STM8300 Ver 1.0 P-Channel 15 VGS=10V VGS=4V 15 -ID, Drain Current(A) VGS=3.5V 9 -ID, Drain Current(A) 12 12 9 125 C 6 25 C 3 -55 C 0 6 VGS=3V 3 0 0 0.5 1 1.5 2 2.5 3 0 0.9 1.8 2.7 3.6 4.5 5.4 -VDS, Drain-to-Source Voltage(V) -VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 120 100 Figure 2. Transfer Characteristics 1.5 1.4 1.3 1.2 1.1 1.0 0 0 25 50 75 100 125 150 T j ( C ) VGS=-10V ID=-4.7A VGS=-4.5V ID=-3.7A RDS(on)(m ) 80 60 40 20 1 V G S =-4.5V V G S =-10V 1 3 6 9 12 15 RDS(on), On-Resistance Normalized -ID, Drain Current(A) Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.2 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.3 ID=-250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 VDS=VGS ID=-250uA 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature 7 Figure 6. Breakdown Voltage Variation with Temperature Jul,31,2008 www.samhop.com.tw STM8300 Ver 1.0 120 100 80 125 C 60 75 C 40 20 0 25 C 20.0 -Is, Source-drain current(A) I D= - 4 . 7 A 10.0 RDS(on)(m ) 125 C 25 C 75 C 0 2 4 6 8 10 1.0 0 0.3 0.6 0.9 1.2 1.5 -VGS, Gate-to-Source Voltage(V) -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 900 10 -VGS, Gate to Source Voltage(V) 750 C, Capacitance(pF) 8 6 4 2 0 0 V DS= - 1 5 V I D= - 4 . 7 A 600 450 300 Coss 150 Crss 0 0 5 10 Ciss 15 20 25 30 2 4 6 8 10 12 14 16 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 250 -ID, Drain Current(A) 70 it 10 0u s Switching Time(ns) 100 60 10 T D(off) 10 R (O DS Tr Tf N) L im T D(on) 1 VGS =10V S ingle P ulse T A=25 C 1 DC 10 1 0 ms 0m s 1m s 1 1 V D S = -15V,I D=-1A V G S = -10 V 0.1 6 10 60 100 300 600 0.1 10 30 50 Rg, Gate Resistance() -VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jul,31,2008 8 www.samhop.com.tw STM8300 Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 t2 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 100 1000 Jul,31,2008 9 www.samhop.com.tw STM8300 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D 0.015X45 A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0 INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8 Jul,31,2008 10 www.samhop.com.tw STM8300 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 A E1 E2 B0 A0 D0 P0 A TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit: PACKAGE SOP 8N 150 A0 6.50 0.15 B0 5.25 0.10 K0 2.10 0.10 D0 1.5 (MIN) D1 1.55 0.10 E 12.0 +0.3 - 0.1 E1 1.75 0.10 E2 5.5 0.10 E P0 8.0 0.10 P1 4.0 0.10 P2 2.0 0.10 T 0.30 0.013 SO-8 Reel W1 S G N R H W UNIT: V M TAPE SIZE 12 REEL SIZE 330 M 330 1 N 62 1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H 12.75 + 0.15 K S 2.0 0.15 G R K V Jul,31,2008 11 www.samhop.com.tw |
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